| PART |
Description |
Maker |
| SXL-208-BLK SXL-208-TR1 SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 100/TRAY.
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13
|
Stanford Microdevices
|
| AWT921 |
From old datasheet system
900MHz Integrated Power Amp
The AWT921 is a monolithic amplifier for use in communication systems that require high gain and output intercept point.
|
ANADIGICS, Inc.
Anadigics Inc
|
| 2SA1483 E000536 |
From old datasheet system
HIGH FREQUENCY AMPLIFIER AIDEO AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS
TRANSISTOR (HIGH FREQUENCY AMPLIFIER, VIDEO AMPLIFIER, HIGH SPEED SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| FH103 1283 |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| KTC3878 KTC3883 |
TRIPLE DIFFUSED PNP TRANSISTOR(HIGH FREQUENCY/ VHF BAND AMPLIFIER)
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, HF, VHF AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| 2SK3117 |
N CHANNEL MOS TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| FC21 |
TR: NPN Epitaxial Planar Silicon Transistor FET: N-Channel Silicon Junction FET High-Frequency Amplifier, AM tuner RF Amplifier Applications
High-Frequency Amplifier/ AM tuner RF Amplifier Applications
|
Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
|
| 2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| AWL6152 AWL6152M7P8 |
2.4 GHz Wireless LAN Power Amplifier Module
The ANADIGICS AWL6152 WLAN Power Amplifier is an easy to use module that delivers high level of linearity and efficiency for high ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| 2SC3906K 2SC4102 2SC2389S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
High-voltage Amplifier Transistor(120V 50mA)
Transistors
TRANSISTOR|BJT|NPN|120VV(BR)CEO|50MAI(C)|SOT-23VAR
High-voltage Amplifier Transistor(120V/ 50mA)
High-voltage Amplifier Transistor(120V, 50mA) 高电压放大器晶体管（120伏特0mA的）
|
Toshiba Semiconductor
ROHM[Rohm]
Rohm Co., Ltd.
|
| AD8010 AD80102000 AD8010AR-16-REEL7 AD8010AR-REEL |
Low Power, High Current Distribution Amplifier
200 mA Output Current High-Speed Amplifier
200 mA Output Current High Speed Amplifier
|
Analog Devices
|
